CMLM0584 multi discrete module ? surface mount silicon p-channel mosfet and low v f schottky diode description: the central semiconductor CMLM0584 is a multi discrete module? consisting of a single p-channel enhancement-mode mosfet and a low v f schottky diode packaged in a space saving picomini? sot-563 surface mount case. this device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. maximum ratings - case: (t a =25c) symbol units power dissipation (note 1) p d 350 mw power dissipation (note 2) p d 300 mw power dissipation (note 3) p d 150 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w maximum ratings - q1: (t a =25c) symbol units drain-source voltage v ds 30 v gate-source voltage v gs 8.0 v continuous drain current i d 450 ma maximum ratings - d1: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v continuous forward current i f 500 ma peak repetitive forward current, tp 1.0ms i frm 3.5 a peak forward surge current, tp = 8.0ms i fsm 10 a electrical characteristics - q1: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =8.0v, v ds =0 3.0 a i dss v ds =30v, v gs =0 1.0 a bv dss v gs =0, i d =100a 30 v v gs(th) v ds =v gs , i d =250a 0.5 1.0 v v sd v gs =0, i s =100ma 0.5 1.1 v r ds(on) v gs =4.5v, i d =430ma 1.1 r ds(on) v gs =2.5v, i d =200ma 2.0 r ds(on) v gs =1.8v, i d =100ma 3.3 g fs v ds =10v, i d =100ma 200 ms features: ? esd protection up to 2kv ? low r ds(on) transistor (1.5 max @ v gs =2.5v) ? low v f schottky diode (0.47v max @ 0.5a) applications: ? dc / dc converters ? battery powered portable equipment notes: (1) ceramic or aluminum core pc board with copper mounting pad area of 4.0mm 2 (2) fr-4 epoxy pc board with copper mounting pad area of 4.0mm 2 (3) fr-4 epoxy pc board with copper mounting pad area of 1.4mm 2 marking code: 58c sot-563 case r1 (28-july 2010) www.centralsemi.com ? device is halogen free by design
CMLM0584 multi discrete module ? surface mount silicon p-channel mosfet and low v f schottky diode c rss v ds =25v, v gs =0, f=1.0mhz 10 pf c iss v ds =25v, v gs =0, f=1.0mhz 55 pf c oss v ds =25v, v gs =0, f=1.0mhz 15 pf electrical characteristics - d1: (t a =25c) symbol test conditions min max units i r v r =10v 20 a i r v r =30v 100 a bv r i r =500a 40 v v f i f =100a 0.13 v v f i f =1.0ma 0.21 v v f i f =10ma 0.27 v v f i f =100ma 0.35 v v f i f =500ma 0.47 v c t v r =1.0v, f=1.0mhz 50 pf lead code: 1) gate q1 2) source q1 3) cathode d1 4) anode d1 5) anode d1 6) drain q1 marking code: 58c sot-563 case - mechanical outline electrical characteristics - q1 - continued: (t a =25c unless otherwise noted) symbol test conditions max units www.centralsemi.com r1 (28-july 2010)
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